Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress
Baozhu Wang, Jinyuan Zhao, Ming Zhang, Lin Yang, Jianchao Wang, Weimin Hou
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsTransistorGallium nitrideBreakdown voltageElectrical engineeringVoltageEngineeringLayer (electronics)NanotechnologyGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesPhotocathodes and Microchannel Plates