Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
Mehrdad Rostami Osanloo, Ali Saadat, Maarten L. Van de Put, Akash Laturia, William G. Vandenberghe
Abstract
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
Topics & Concepts
Materials scienceDielectricMonolayervan der Waals forceTransistorLeakage (economics)Condensed matter physicsOptoelectronicsNanotechnologyChemistryMoleculeElectrical engineeringPhysicsEconomicsOrganic chemistryEngineeringMacroeconomicsVoltage2D Materials and ApplicationsMXene and MAX Phase MaterialsFerroelectric and Negative Capacitance Devices