High-Performance and Low-Power Transistors Based on Anisotropic Monolayer <i>β</i>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Te</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
Shiying Guo, Hengze Qu, Wenhan Zhou, Shengyuan A. Yang, Yee Sin Ang, Jing Lü, Haibo Zeng, Shengli Zhang
Abstract
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10-nm regime. Inspired by the successful fabrication of 2D \ensuremath{\beta}-${\mathrm{Te}\mathrm{O}}_{2}$ and the high on:off ratio and high air stability of fabricated FETs [Zavabeti et al., Nat. Electron. 4, 277 (2021)], we provide a comprehensive investigation of the electronic structure of monolayer \ensuremath{\beta}-${\mathrm{Te}\mathrm{O}}_{2}$ and the device performance of sub-10-nm MOSFETs based on this material. The anisotropic electronic structure of monolayer \ensuremath{\beta}-${\mathrm{Te}\mathrm{O}}_{2}$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultrahigh on-state current exceeding 3700 \textmu{}A/\textmu{}m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer \ensuremath{\beta}-${\mathrm{Te}\mathrm{O}}_{2}$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, subthreshold swing, delay time, and power-delay product. This study unveils monolayer \ensuremath{\beta}-${\mathrm{Te}\mathrm{O}}_{2}$ as a promising candidate for ultrascaled devices in future nanoelectronics.