13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Wontaeck Jung, Hyung-Gon Kim, Do-Bin Kim, Taehyun Kim, Namhee Lee, Dong-Jin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min‐Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sang-Wan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sung‐Hoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Ki-Sung Kim, Eungsuk Lee, Myeongwoo Lee, Sungkyu Jo, Chan Ho Kim, Jong‐Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, Sung‐Hoi Hur
Abstract
3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every year. In particular, the 4b/cell (QLC) 3D-NAND technology is appearing to be one of the most promising solutions to meet the market demand with excellent cost effectiveness, while QLC technology is being gradually adopted by various storage applications [1]. However, there are several challenges that need addressing so that QLC technology is adopted rapidly by the market: (1) is the reprogram with on-chip buffered program (OBP) [2], and (2) the low performance caused by the 16-state verify.