Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications
Nisha Chugh, Manoj Kumar, Subhasis Haldar, Monika Bhattacharya, R.S. Gupta
Topics & Concepts
High-electron-mobility transistorMaterials scienceBreakdown voltageLeakage (economics)AmplifierOptoelectronicsVoltageLinearityElectrical engineeringElectric fieldRadio frequencyGallium nitrideTransistorPhysicsCMOSEngineeringNanotechnologyEconomicsMacroeconomicsLayer (electronics)Quantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices