High-performance p-channel transistors with transparent Zn doped-CuI
Ao Liu, Huihui Zhu, Won‐Tae Park, Sejun Kim, Hyungjun Kim, Myung‐Gil Kim, Yong‐Young Noh
Abstract
Abstract ‘Ideal’ transparent p -type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p -type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm 2 V −1 s −1 and high on/off current ratio of ~10 7 with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n -type metal-oxide semiconductor.