Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications
Fengben Xi, Yi Han, Mingshan Liu, Jin Hee Bae, A. T. Tiedemann, Detlev Grützmacher, Qing‐Tai Zhao
Abstract
pulse measurements. Furthermore, spike-timing-dependent plasticity is also emulated using the gate voltage pulse as the pre-synaptic spike and the drain voltage pulse as the post-synaptic spikes. These findings indicate that FE-SBFET synapses have high potential for future neuromorphic computing applications.
Topics & Concepts
Materials scienceNeuromorphic engineeringExcitatory postsynaptic potentialOptoelectronicsNeural facilitationFerroelectricitySynaptic weightSchottky barrierInhibitory postsynaptic potentialNeuroscienceComputer scienceArtificial neural networkDiodeBiologyMachine learningDielectricAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices