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Type-I band alignment and strain-tunable electronic and optical properties of MoGe2N4/MoSiGeN4 heterostructures

Qasim J. Tarbool, Hamad Rahman Jappor

2026Computational Condensed Matter14 citationsDOI

Topics & Concepts

HeterojunctionOptoelectronicsMaterials scienceBand gapDirect and indirect band gapsAbsorption (acoustics)Phononvan der Waals forceElectronic band structureDispersion (optics)Valence (chemistry)Density functional theoryAb initioStrain engineeringCondensed matter physicsQuantum wellPhotonicsFree carrier absorptionAtmospheric temperature rangeUltravioletChemistryEffective mass (spring–mass system)Quantum dotSemiconductorPhotodetectionDensity of statesVisible spectrum2D Materials and ApplicationsHeusler alloys: electronic and magnetic propertiesMachine Learning in Materials Science
Type-I band alignment and strain-tunable electronic and optical properties of MoGe2N4/MoSiGeN4 heterostructures | Litcius