Possible realization and protection of valley-polarized quantum Hall effect in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mn</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">W</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>

Abstract

By using the first-principles calculations and model analyses, we found that the combination of defected tungsten disulfide monolayer and manganese adsorption may give a $K{K}^{\ensuremath{'}}$ valley spin splitting up to 210 meV. This system also has a tunable magnetic anisotropy energy and its Fermi level sits right in a large band gap. Therefore it can be used for the realization of the valley-polarized anomalous Hall effect and for the exploration of other valley related physics without using optical methods. A protective environment can be formed by covering it with a hexagonal BN layer, without much disturbance to the benign properties of $\mathrm{Mn}/\mathrm{W}{\mathrm{S}}_{2}$.

Topics & Concepts