Growth and Etching of Centimeter-Scale Self-Assembly Graphene–h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices
Menghan Li, Yajing Sun, Xiao Xue, Xueying Lu, Zilong Guo, Yandong Han, Jichen Dong, Dechao Geng, Lin Li, Wensheng Yang
Abstract
The highly integrated miniature electronic and photonic components have been extensively studied because they exhibit a significant potential in producing scaled circuits with high performance. Inspired by the spontaneous organization of molecular units into ordered structures, we demonstrate for the first time a controllable fabrication of super-ordered graphene–hexagonal boron nitride (h-BN) planar heterostructure arrays on a liquid Cu surface by a chemical vapor deposition method. The area of graphene and h-BN arrays can reach up to 1 cm2 with a prominent uniformity in morphology and orientation. The size and density of the arrays can be precisely tailored by modulating the composition ratio of the CH4/H2. The electrostatic force among the heterostructure units and the fluidity of the liquid metal surface are accounted for the formation of the super-ordered arrays. Moreover, selective etching of h-BN in the heterostructure is also achieved, offering a direct top-down approach for the construction of ordered 2D patterns. The construction and etching of large-scale super-ordered 2D heterostructure arrays paves the way toward scaled integrated devices.