The influence of pH and H2O2 on surface quality and material removal rate during W-CMP
Lin Wang, Feng Peng, Hongyu Chen, Wei Hang, Cuiping Yu, Shunhua Chen, Shijun Zhao, Zhenggang Wu, Yi Ma, Binghai Lyu, Julong Yuan
Topics & Concepts
PassivationChemical-mechanical planarizationCorrosionPolishingTungstenMaterials scienceDissolutionHydrogen peroxideX-ray photoelectron spectroscopySlurryMetallurgyTungsten carbideLayer (electronics)Tungsten trioxideOxideChemical engineeringChemistryComposite materialOrganic chemistryEngineeringAdvanced Surface Polishing TechniquesAdvanced materials and compositesAdvanced machining processes and optimization