High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes
Ya-Cong Lu, Zhenfeng Zhang, Xun Yang, Gaohang He, Chaonan Lin, Xue-Xia Chen, Jinhao Zang, Wenbo Zhao, Yancheng Chen, Leilei Zhang, Yizhe Li, Chongxin Shan
Abstract
Ga 2 O 3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga 2 O 3 MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga 2 O 3 MWs, possessing a light/dark current ratio of 10 7 and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga 2 O 3 MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga 2 O 3 MWs, and thus may push forward their future applications.