Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
Kijeong Han, Aditi Agarwal, Ajit Kanale, B. Jayant Baliga, Subhashish Bhattacharya, Tzu-Hsuan Cheng, Douglas C. Hopkins, Voshadhi Amarasinghe, John Ransom
Abstract
In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.
Topics & Concepts
Materials scienceOptoelectronicsDiodeElectrical engineeringTransistorFabricationVoltageField-effect transistorConvertersEngineeringPathologyAlternative medicineMedicineSilicon Carbide Semiconductor TechnologiesMultilevel Inverters and ConvertersHVDC Systems and Fault Protection