Long-Range Interfacial Charge Carrier Trapping in Halide Perovskite-C<sub>60</sub> and Halide Perovskite-TiO<sub>2</sub> Donor–Acceptor Films
Bhagyashree Mahesha Sachith, Takuya Okamoto, Sushant Ghimire, Tomokazu Umeyama, Yuta Takano, Hiroshi Imahori, Vasudevanpillai Biju
Abstract
Interfacial electron transfer across perovskite-electron acceptor heterojunctions plays a significant role in the power-conversion efficiency of perovskite solar cells. Thus, electron donor–acceptor thin films of halide perovskite nanocrystals receive considerable attention. Nevertheless, understanding and optimizing distance- and thickness-dependent electron transfer in perovskite-electron acceptor heterojunctions are important. We reveal the distance-dependent and diffusion-controlled interfacial electron transfer across donor–acceptor heterojunction films formed by formamidinium or cesium lead bromide (FAPbBr3/CsPbBr3) perovskite nanocrystals with TiO2/C60. Self-assembled nanocrystal films prepared from FAPbBr3 show a longer photoluminescence lifetime than a solution, showing a long-range carrier migration. The acceptors quench the photoluminescence intensity but not the lifetime in a solution, revealing a static electron transfer. Conversely, the electron transfer in the films changes from dynamic to static by moving toward the donor–acceptor interface. While radiative recombination dominates the electron transfer at 800 μm or farther, the acceptors scavenge the photogenerated carriers within 100 μm. This research highlights the significance of interfacial electron transfer in perovskite films.