End-Bonded Contacts of Tellurium Transistors
Wei Jiang, Xudong Wang, Yan Chen, Shuaiqin Wu, Binmin Wu, Xin Yang, Tie Lin, Hong Shen, Xiangjian Meng, Xing Wu, Junhao Chu, Jianlu Wang
Abstract
The development of novel low-dimensional materials makes the metallic contact to nanostructure facing challenges. Compared to side contacts, end-bonded contacts are proposed to be more effective pathways for charge injection and extraction. However, there is a lack of up-to-date understanding regarding end-bonded contacts, especially the recently emerged high-performance field-effect transistors (FETs). Here, the end-bonded contacts in tellurium (Te) transistors are first achieved by inducing metal semiconductor alloy. The formation of Pd–Te alloy structure is confirmed by a high-resolution transmission electron microscope (HRTEM) in Te-nanorod-based FETs. The ultralow specific contact resistance is estimated to be 5.1 × 10–9 Ω cm2 by the transmission line mode. On the basis of this finding, Te FETs are shown to exhibit incredible electronic properties, metal-insulator transition, and photodetection performance. This in-depth investigation of the end-bonded contact between Pd and Te speeds up the potential application of Te nanostructure and provides a feasible method for contact engineering in advanced devices.