Enhanced average power factor and <i>ZT</i> value in PbSe thermoelectric material with dual interstitial doping
Liqing Xu, Xiaoying Wang, Yang Wang, Zhibin Gao, Xiangdong Ding, Yu Xiao
Abstract
High PF ave of 24.18 μW cm −1 K −2 and ZT ave of 1.01 at 300–773 K have been achieved in n-type Pb 1.02 Se–0.2%Cu thermoelectric through dual Pb and Cu interstitial doping, and it exceeds other Se/S-based (Te free) n-type thermoelectric materials.
Topics & Concepts
DopingThermoelectric effectDual (grammatical number)Materials scienceValue (mathematics)Power factorSeebeck coefficientPower (physics)Factor (programming language)Condensed matter physicsOptoelectronicsThermodynamicsPhysicsComputer scienceMathematicsStatisticsLiteratureProgramming languageArtAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin Films