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Performance Evaluation of Si/SiC Hybrid Switch-Based Three-Level Active Neutral-Point-Clamped Inverter

Haichen Liu, Tiefu Zhao, Xuezhi Wu

2022IEEE Open Journal of Industry Applications24 citationsDOIOpen Access PDF

Abstract

In this paper, two types of Silicon (Si) IGBT and Silicon Carbide (SiC) hybrid switch (Si/SiC HyS) based three-level active neutral-point-clamped (3L-ANPC) inverter are proposed for high efficiency and low device cost. The proposed Si/SiC HyS-based 3L-ANPC inverters are compared with the full Si IGBT, full SiC MOSFET, and Si with SiC devices-based hybrid 3L-ANPC solutions on the inverter efficiency, power capacity, and device cost. It is shown that compared with the full Si IGBT 3L-ANPC solution, the inverter efficiency improvement by Si/SiC HyS is 2.4% and 1.8% at light load condition and heavy load condition, respectively. Compared to the full SiC MOSFET solution and 2-SiC MOSFETs hybrid scheme, the device cost of 2-Si/SiC HyS-based 3L-ANPC is reduced by 78% and 50% with 0.28% and 0.21% maximum inverter efficiency sacrifices. The testing results show that the proposed Si/SiC HyS-based 3L-ANPC inverter is a cost-effective way to realize high inverter efficiency. Between the two proposed Si/SiC HyS-based 3L-ANPC inverters, the 2-Si/SiC HyS-based 3L-ANPC inverter has lower device cost which makes it more suitable for cost-sensitive and high efficiency applications. While the 4-Si/SiC HyS-based 3L-ANPC inverter has higher output power capacity, making it a better candidate for high power density, high power capacity, and high efficiency applications.

Topics & Concepts

InverterSilicon carbideMaterials scienceInsulated-gate bipolar transistorMOSFETPower (physics)OptoelectronicsElectronic engineeringTopology (electrical circuits)Computer scienceElectrical engineeringVoltageEngineeringTransistorPhysicsComposite materialQuantum mechanicsMultilevel Inverters and ConvertersSilicon Carbide Semiconductor TechnologiesAdvanced DC-DC Converters
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