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Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE

Maha A. Alenizi, Mansour Aouassa, Mohammed Bouabdellaoui, K.M.A. Saron, A.K. Aladim, Mohammed Ibrahim, Isabelle Berbézier

2024Physica B Condensed Matter26 citationsDOI

Topics & Concepts

Materials scienceQuantum dotMolecular beam epitaxyOptoelectronicsDielectricSemiconductorGermaniumDielectric spectroscopyNanotechnologySiliconEpitaxyLayer (electronics)ChemistryElectrodePhysical chemistryElectrochemistrySemiconductor materials and interfacesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and devices
Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO2:Ge QDs/n-Si) grown by MBE | Litcius