Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO<i><sub>x</sub></i>-Capped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films
Yan Zhang, Zhen Fan, Dao Wang, Jiali Wang, Zhengmiao Zou, Yushan Li, Qiang Li, Ruiqiang Tao, Deyang Chen, Min Zeng, Xingsen Gao, Jiyan Dai, Guofu Zhou, Xubing Lu, Jun‐Ming Liu
Abstract
A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO2-based thin film. Here, vanadium oxide (VOx), a functional oxide exhibiting the insulator–metal transition, is used as a novel type of a capping layer for the Hf0.5Zr0.5O2 (HZO) thin film. It is demonstrated that the VOx capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively. Specifically, the HZO thin film with a VCL shows large remanent polarization (2Pr ≈36.9 μC/cm2), relatively small coercive field (Ec ≈1.09 MV/cm), high endurance (up to 109 cycles), and long retention (>105 seconds). The enhanced FE properties may be attributed to the VCL-induced stabilization of the FE o-phase and suppression of oxygen vacancies at the interface. Furthermore, the HZO thin film with a VCL exhibits a successive rightward shift of polarization-voltage (P-V) hysteresis loop as the temperature increases. This is well correlated with the insulator–metal transition in a VCL, which can modulate the interfacial built-in field and thus cause the P-V loop shift. It is therefore demonstrated that a VCL not only enhances the FE properties of HZO thin films but also provides a temperature degree of freedom to modulate the FE properties, which may open up a new pathway to develop HfO2-based FE memories with high performance and novel functionalities.