Hydrogenated VO<sub>2</sub> Bits for Probabilistic Computing
Sunbin Deng, Tae Joon Park, Haoming Yu, Arnob Saha, A N M Nafiul Islam, Qi Wang, Abhronil Sengupta, Shriram Ramanathan
Abstract
The stochastic nature of electronic phase transitions can serve as a random number generating source. This work reports probabilistic bits ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -bits) based on hydrogen-doped vanadium oxide (H-VO2) devices with tunable insulator-metal transition (IMT) characteristics. Hydrogen donor doping reduces ground state resistance and enables control over threshold switching voltage in the post-fabricated devices. Through a paired-pulse scheme, the H-VO2 devices could generate stochastic bit sequences with adjustable switching probabilities. The sequence with a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -bit value of 0.488 could pass 14 out of 15 National Institute of Standards and Technology (NIST) random and pseudorandom number generator tests.