GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature
Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang, Lihong Duan, Yongsheng Shi, Hai Wang
Abstract
Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c -plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μ m, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm 2 .
Topics & Concepts
Metalorganic vapour phase epitaxyMaterials scienceBlue laserContinuous waveOptoelectronicsChemical vapor depositionDiodeRidgeWavelengthLaserLaser diodeSubstrate (aquarium)Light-emitting diodeOpticsEpitaxyNanotechnologyLayer (electronics)PhysicsPaleontologyOceanographyBiologyGeologyGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesZnO doping and properties