A highly reliable radiation hardened 8T SRAM cell design
Yinghuan Lv, Qing Wang, Hao Ge, Tiantian Xie, Jing Chen
Topics & Concepts
Static random-access memorySoft errorSilicon on insulatorSingle event upsetAbsorbed doseNoise marginRadiationMemory cellElectronic engineeringMaterials scienceOptoelectronicsComputer scienceTransistorSiliconPhysicsElectrical engineeringEngineeringVoltageOpticsRadiation Effects in ElectronicsVLSI and Analog Circuit TestingLow-power high-performance VLSI design