Bandgap widening through doping for improving the photocatalytic oxidation ability of narrow-bandgap semiconductors
Yue Yang, Masayuki Toyoda, Akira Yamaguchi, Yohei Cho, An Niza El Aisnada, Hideki Abe, Shigenori Ueda, Sayuri Okunaka, Susumu Saito, Min Liu, Hiromasa Tokudome, Masahiro Miyauchi
Abstract
We introduced an orbital dilution strategy for bandgap widening through doping. Specifically, we found that the lanthanum-doped (La-BiVO 4 ) photocatalyst has a wider bandgap and exhibits stronger oxidation power than the pristine BiVO 4 .
Topics & Concepts
Band gapDopingPhotocatalysisSemiconductorMaterials scienceOptoelectronicsWide-bandgap semiconductorNanotechnologyEngineering physicsChemistryCatalysisPhysicsOrganic chemistryGa2O3 and related materialsAdvanced Photocatalysis TechniquesZnO doping and properties