High-Voltage CMOS Active Pixel Sensor
I. Perić, Attilio Andreazza, Heiko Augustin, M. Barbero, M. Benoit, Raimon Casanova, F. Ehrler, G. Iacobucci, Richard Leys, Annie Meneses González, P. Pangaud, Mridula Prathapan, R. Schimassek, André Schöning, E. Vilella Figueras, Alena Weber, M. Weber, Winnie Wong, Hui Zhang
Abstract
The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 μm can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.