Monolayer SnS<sub>2</sub> Schottky barrier field effect transistors: effects of electrodes
Hong Li, Yunfeng Zhang, Fengbin Liu, Jing Lü
Abstract
An ML SnS 2 SBFET with an n-type Ohmic-contact 1T-NbTe 2 electrode exhibits remarkably better performance than a device with a Schottky-contact 2H-NbTe 2 electrode and can exceed the IRDS targets for both low-power and high-performance applications.
Topics & Concepts
Schottky barrierOhmic contactElectrodeMonolayerMaterials scienceOptoelectronicsMetal–semiconductor junctionTransistorField-effect transistorSchottky diodeNanotechnologyElectrical engineeringVoltageLayer (electronics)ChemistryEngineeringPhysical chemistryDiode2D Materials and ApplicationsChalcogenide Semiconductor Thin FilmsMXene and MAX Phase Materials