Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications
Reza Ghandi, Collin Hitchcock, Stacey Kennerly, Mohamed Torky, T. Paul Chow
Abstract
We comparatively review charge-balanced and conventional vertical-pillar superjunction SiC power device structures, with particular emphasis on implementations using high-energy (MeV) implantations. These superjunction diodes and MOSFETs offer specific on-resistance below the SiC unipolar limit and a scalable path towards realization of high frequency switches required for 3-20kV power electronics applications. For the first time, we experimentally demonstrate 3.8kV deep-implanted SiC superjunction JBS diodes formed with only two rounds of epitaxial overgrowth and high-energy implantations.
Topics & Concepts
DiodeMaterials scienceOptoelectronicsMOSFETPower electronicsJFETElectrical engineeringElectronicsScalabilityPower MOSFETVoltageWide-bandgap semiconductorSawtooth waveEngineering physicsElectronic engineeringTransistorComputer scienceEngineeringField-effect transistorTelecommunicationsDatabaseSilicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionHVDC Systems and Fault Protection