Ferroelectric C-Axis Textured Aluminum Scandium Nitride Thin Films of 100 nm Thickness
Dixiong Wang, Jeffrey Zheng, Zichen Tang, Michael D’Agati, Paria S. M. Gharavi, Xiwen Liu, Deep Jariwala, Eric A. Stach, Roy H. Olsson, Volker Roebisch, Martin Kratzer, Bernd Heinz, Myung‐Geun Han, Kim Kisslinger
Abstract
We report on the properties of Aluminum Scandium Nitride (AlScN) thin films deposited by pulsed-DC co-sputtering. We present the impact of the nitrogen-to-argon gas ratio on the crystal growth orientation, film stress, surface roughness, scandium concentration, and deposition rate of 760-860 nm thick AlScN thin films on Ti/Pt (111). We utilize the optimized process conditions from this study to deposit thin layers of AlScN and to explore the nucleation and orientation of thin AlScN layers on Ti/Pt (111). We report on the ferroelectric properties of 100 nm thick AlScN materials.