Room-temperature single-photon emitters in silicon nitride
Alexander Senichev, Zachariah O. Martin, Samuel Peana, Demid Sychev, Xiaohui Xu, Alexei Lagutchev, Alexandra Boltasseva, Vladimir M. Shalaev
Abstract
(0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.
Topics & Concepts
Silicon nitridePhotonOptoelectronicsNitrideMaterials scienceSiliconNanotechnologyEngineering physicsOpticsPhysicsLayer (electronics)Diamond and Carbon-based Materials ResearchNanowire Synthesis and ApplicationsSilicon Nanostructures and Photoluminescence