Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Michael Hollenbach, Yonder Berencén, Ulrich Kentsch, Manfred Helm, Georgy V. Astakhov
Abstract
We create and isolate single-photon emitters with a high brightness approaching 10 5 counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the 12 C and 28 Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on an SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.