<scp>In‐plane</scp> epitaxial growth of <scp>2D CoSe‐WSe<sub>2</sub> metal‐semiconductor</scp> lateral heterostructures with improved <scp>WSe<sub>2</sub></scp> transistors performance
Huifang Ma, Ke‐Jing Huang, Ruixia Wu, Zhengwei Zhang, Jia Li, Bei Zhao, Chen Dai, Ziwei Huang, Hongmei Zhang, Yang Xiang-Dong, Bo Li, Yuan Liu, Xiangfeng Duan, Xidong Duan
Abstract
Abstract The two‐dimensional (2D) in‐plane (lateral) heterostructures have attracted increasing interest for potential applications in the atomically thin electronics and optoelectronics. While most studies focus on semiconductor‐semiconductor lateral heterostructures with highly similar lattice structures between the constituent components, the synthesis of metal‐semiconductor lateral heterostructures is much less explored and usually more challenging due to more distinct lattice structures or chemical properties. Herein, a vapor phase epitaxy growth method of high‐quality metal‐semiconductor lateral heterostructures between tetragonal CoSe and hexagonal WSe 2 is reported. The 2D CoSe can selectively nucleate at the edge of pre‐grown WSe 2 nanosheets to form CoSe‐WSe 2 metal‐semiconductor lateral heterostructures. Optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) studies reveal distinct contrast across the heterostructure interface. High‐resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies further confirm the microstructure modulation across the heterostructure interface. The field‐effect transistors (FETs) of CoSe‐WSe 2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts, suggesting the in‐plane metal‐semiconductor junctions may function as improved contacts for the atomically thin electronics. image