Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
Florent Albany, F. Lecourt, Ewa Walasiak, Nicolas Defrance, Arnaud Curutchet, Hassan Maher, Y. Cordier, Nathalie Labat, Nathalie Malbert
Topics & Concepts
Threshold voltageTransconductanceHigh-electron-mobility transistorMaterials scienceIonFluorineOptoelectronicsStress (linguistics)Degradation (telecommunications)Ion implantationWide-bandgap semiconductorTransistorVoltageAnalytical Chemistry (journal)ChemistryElectrical engineeringMetallurgyOrganic chemistryPhilosophyLinguisticsChromatographyEngineeringGaN-based semiconductor devices and materialsZnO doping and propertiesMetal and Thin Film Mechanics