16kbit HfO<sub>2</sub>:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
T. François, J. Coignus, Adam Makosiej, Bastien Giraud, C. Carabasse, Justine Barbot, Sébastien Martin, N. Castellani, T. Magis, H. Grampeix, S. Van Duijn, C. Mounet, P. Chiquet, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, E. Nowak, M. Bocquet, N. Barrett, F. Andrieu, L. Grenouillet
Abstract
16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/Hf02:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles. For the first time, solder reflow compatibility is demonstrated for HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.