Multifunctional UV photodetect-memristors based on area selective fabricated Ga <sub>2</sub> S <sub>3</sub> /graphene/GaN van der Waals heterojunctions
Zhengliang Lin, Junrui Chen, Zhuohang Zheng, Quanguang Lai, Zhiqi Liu, Liwei Liu, Jiaying Xiao, Wenliang Wang
Abstract
) memory features at 3 V. Here, the huge hole barriers formed on the two edges of graphene set the foundation of trapping and detecting light-induced carriers. Afterwards, handwriting numeral recognition tasks are carried out based on the performance extracted from the device and a simplified noise filtering and improved recognition accuracy system is proposed, confirming its application potential in the artificial intelligence area. This study proposes a practical way to grow large-size 2D materials selectively, shows the valuable application potential of p-g-n heterojunctions in various application fields, and expands an innovative path of device development in the post-Moorish era.