CVD-deposited Cu<sub>2</sub>O thin films with a record Hall hole mobility of 263 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and field-effect mobility of 0.99 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>
Vivek Singh, Jyoti Sinha, S. A. Shivashankar, Sushobhan Avasthi
Abstract
Using a combination of chemical vapor deposition, controlled nucleation, and surface energy optimization, we demonstrate record hole mobility in Cu 2 O thin-films and thin-film transistors.
Topics & Concepts
Thin filmNucleationMaterials scienceHall effectChemical vapor depositionElectron mobilityDeposition (geology)Analytical Chemistry (journal)Condensed matter physicsNanotechnologyOptoelectronicsElectrical resistivity and conductivityPhysicsChemistryThermodynamicsBiologyQuantum mechanicsChromatographyPaleontologySedimentCopper-based nanomaterials and applicationsZnO doping and propertiesElectronic and Structural Properties of Oxides