Fractional quantum Hall effect in CVD-grown graphene
M Schmitz, T Ouaj, Z Winter, K Rubi, K Watanabe, T Taniguchi, U Zeitler, B Beschoten, C Stampfer
Abstract
Abstract We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to ν * = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the p /3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.