Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS<sub>2</sub>/Metal–Organic Framework Heterostructure
Boran Wang, Hongbin Li, Haotian Tan, Yi Gu, Lin Chen, Ji Li, Zhengzong Sun, Qingqing Sun, Shi‐Jin Ding, David Wei Zhang, Hao Zhu
Abstract
The high surface-to-volume ratio and decent material properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) make them advantageous as an active channel in field-effect transistor (FET)-type gas sensing devices. However, most existing TMD gas sensors are based on a two-terminal resistance-type structure and suffer from low responsivity and slow response, which has urged materials optimization as well as device engineering. Metal–organic frameworks (MOFs) have a large number of ordered binding sites in the pores that can specifically bind to gas molecules and can be decorated on TMD surfaces to enhance gas sensing capabilities. In this work, we successfully realize the FET-type gas sensor with MoS2-MOF as the channel. The fabricated gas sensor exhibits enhanced NH3 sensing performance (22.475 times higher in responsivity) as compared to the device with a bare MoS2 channel. In addition, the FET-type gas sensor geometry enables effective tuning of sensitivity through electrical gating based on the modulation over the channel carrier concentration. Furthermore, the dependence of responsivity on the MoS2 thickness is investigated as well to achieve an in-depth understanding of the electrical modulation mechanism of the MOF-decorated MoS2 gas sensors. The demonstrated results can pave an attractive pathway toward the realization of advanced high-response and tunable TMD-based gas sensing devices.