Baseline 1300 nm dilute nitride VCSELs
Marcin Gębski, D. Dontsova, Nasibeh Haghighi, Kalyan Nunna, R. W. Yanka, Andrew Johnson, Rodney Pelzel, James A. Lott
Abstract
Dilute nitride (DN) vertical cavity surface emitting lasers (VCSELs) emitting near 1300 nm exhibit state-of-the-art performance including bandwidths of 10 GHz and a record high error-free data transmission of 12 Gbps. Renewed interest in DN VCSELs stems from emerging applications in kilometer-reach digital communication across optical fiber and across free space via eye safe beams, time-of-flight and structured light sensing, and photonic-electronic integrated circuit optical interconnects. We produce VCSEL wafers in a production molecular beam epitaxy system on 3- and 4-inch diameter GaAs wafers. We report record dynamic performance for our test VCSELs with oxide aperture diameters ranging from 2 to 12 µm.