The interface microstructure and band alignment of hexagonal boron nitride/diamond heterojunctions
Jingren Chen, Ran Tao, Gaokai Wang, Zhigang Yin, Libin Zeng, Xinxin Yu, Siyu Zhang, Yun Wu, Zhonghui Li, Xingwang Zhang
Abstract
h-BNs with different orientations are directly grown on polycrystalline diamond due to minimization of the system energy. The diamond/h-BN heterojunction shows a type-II band alignment with a valence/conduction band offset of 2.08/1.86 eV.
Topics & Concepts
Materials scienceDiamondHeterojunctionBand offsetOptoelectronicsHexagonal crystal systemHexagonal boron nitrideConduction bandValence bandBoron nitrideMicrostructureOffset (computer science)Band gapCrystallographyNanotechnologyMetallurgyElectronGrapheneChemistryComputer scienceProgramming languagePhysicsQuantum mechanicsGraphene research and applicationsDiamond and Carbon-based Materials Research2D Materials and Applications