Homoepitaxial growth of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mfenced> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>02</mml:mn> </mml:mrow> </mml:mfenced> </mml:math> <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> by halide vapor phase epitaxy
Yuichi Oshima, Takayoshi Oshima
Abstract
Abstract We demonstrated halide vapor phase epitaxy of β -Ga 2 O 3 on a native <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close=")" open="("> <mml:mrow> <mml:mover> <mml:mn>1</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> <mml:mn>02</mml:mn> </mml:mrow> </mml:mfenced> </mml:math> substrate, which should be scalable and useful for the formation of vertical fins and trenches with smooth (100)-faceted sidewalls using plasma-free microfabrication techniques, e.g., selective area growth and gas etching, for use in power device applications. No misoriented domains were detected in the epiwafer during x-ray pole figure measurements. The full width at half maximum values of the x-ray rocking curves of the epiwafer were virtually the same as those of the bare substrate. No domain boundaries were found using scanning transmission electron microscopy at the film/substrate interface. The growth rate was as high as 23 μ m h −1 , which was comparable to the rate for a (001) epilayer that was grown simultaneously.