Optical properties of Ga<sub>2</sub>O<sub>3</sub> thin films grown by atomic layer deposition using GaI<sub>3</sub> and O<sub>3</sub> as precursors
Lauri Aarik, Hugo Mändar, Aarne Kasikov, Aivar Tarre, Jaan Aarik
Abstract
Absorption spectra, bandgap energies, refractive indices, and antireflection properties of atomic-layer-deposited amorphous Ga 2 O 3 , κ/ε-Ga 2 O 3 , and α-Ga 2 O 3 films were Investigated.
Topics & Concepts
Materials scienceAtomic layer depositionAmorphous solidBand gapLayer (electronics)Thin filmSpectral lineDeposition (geology)Absorption spectroscopyAbsorption (acoustics)Analytical Chemistry (journal)Refractive indexCrystallographyOptoelectronicsOpticsNanotechnologyChromatographySedimentPhysicsAstronomyBiologyPaleontologyComposite materialChemistryGa2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques