High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
Tae Soo Kim, Sidi Fan, Sanghyub Lee, Min‐Kyu Joo, Young Hee Lee
Abstract
Abstract Monolayer molybdenum disulfide (MoS 2 ) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mobility in field-effect transistors, but little is known to date about the effect of two-dimensional layered materials. Herein, we propose a Gr/MoS 2 heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of ~ 10 (~ 100 cm 2 V −1 s −1 ) compared to that of monolayer MoS 2 , while retaining a high on/off current ratio of ~ 10 8 at room temperature. The Fermi level of Gr can be tuned by the wide back-gate bias ( V BG ) to modulate the effective Schottky barrier height (SBH) at the Gr/MoS 2 heterointerface from 528 meV ( n -MoS 2 / p -Gr) to 116 meV ( n -MoS 2 / n -Gr), consequently enhancing the carrier mobility. The double humps in the transconductance derivative profile clearly reveal the carrier transport mechanism of Gr/MoS 2 , where the barrier height is controlled by electrostatic doping.