Lasing up to 380 K in a sublimated GaN nanowire
Sylvain Sergent, B. Damilano, S. Vézian, Sébastien Chenot, Tai Tsuchizawa, Masaya Notomi
Abstract
We report on GaN nanowire lasers fabricated by selective-area sublimation, and we show that sublimated GaN nanowires can exhibit ultraviolet lasing action under optical pumping beyond room temperature, up to 380 K. We study by microphotoluminescence the temperature-dependent behavior of single nanowire lasers between 7 K and 380 K and extract a characteristic temperature of T = 126 K. We finally present a statistical study of the maximum lasing temperature in individual sublimated GaN nanowires and use it to assess the performance of the selective-area sublimation method for nanowire-based lasing applications.
Topics & Concepts
Lasing thresholdNanowireSublimation (psychology)Materials scienceOptoelectronicsLaserGallium nitrideUltravioletNanotechnologyOpticsWavelengthPhysicsPsychologyLayer (electronics)PsychotherapistGaN-based semiconductor devices and materialsStrong Light-Matter InteractionsThermal Radiation and Cooling Technologies