Giant spin-Hall and tunneling magnetoresistance effects based on a two-dimensional nonrelativistic antiferromagnetic metal
Qirui Cui, Yingmei Zhu, Xiong Yao, Ping Cui, Hongxin Yang
Abstract
The emergence of nonrelativistic band spin splitting in fully compensated collinear antiferromagnets provides an intriguing platform for investigating nontrivial spin-dependent phenomena. Here, we explore the relationship between magnetic symmetry and electronic states of two-dimensional (2D) antiferromagnets and demonstrate that nonrelativistic and giant band spin splitting and topological electronic features emerge in room-temperature antiferromagnetic metal ${\mathrm{V}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ that is sufficiently stable to be exfoliated from the layered compound. More interestingly, the anisotropic spin-momentum coupling of monolayer ${\mathrm{V}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ gives rise to the spin-Hall effect where the spin-charge conversion ratio is expected to be over 30%, and two fully spin-polarized and separated conduction channels with opposite spin polarization make it an ideal candidate for an electrode that is applied in the antiferromagnetic tunneling junction with large magnetoresistance. Our work elucidates the unexplored potential of 2D antiferromagnetic metals with nonrelativistic band spin splitting for their practical applications in spintronics.