Progress of InGaN-Based Red Micro-Light Emitting Diodes
Panpan Li, Hongjian Li, Matthew S. Wong, Philip Chan, Yunxuan Yang, Haojun Zhang, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Abstract
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device performance even operating at a high temperature of up to 400 K. We review the progress of InGaN red μLEDs. Novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells are discussed.
Topics & Concepts
Light-emitting diodeOptoelectronicsMaterials scienceDiodeQuantum efficiencyRed lightQuantum wellOpticsPhysicsBiologyBotanyLaserGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor Quantum Structures and Devices