Characterization of Loss Mechanisms in a Fluxonium Qubit
Hantao Sun, Feng Wu, Hsiang‐Sheng Ku, Xizheng Ma, Jing Qin, Zhijun Song, Tenghui Wang, Gengyan Zhang, Jingwei Zhou, Yaoyun Shi, Hui‐Hai Zhao, Chunqing Deng
Abstract
Using a fluxonium qubit with in situ tunability of its Josephson energy, we characterize its energy relaxation at different flux biases as well as different Josephson energy values. The relaxation rate at qubit energy values, ranging more than 1 order of magnitude around the thermal energy ${k}_{B}T$, can be quantitatively explained by a combination of dielectric loss and $1/f$ flux noise with a crossover point. The amplitude of the $1/f$ flux noise is consistent with that extracted from the qubit dephasing measurements at the flux sensitive points. In the dielectric loss dominant regime, the loss is consistent with that arising from the electric dipole interaction with two-level-system (TLS) defects. In particular, by increasing the Josephson energy, thus decreasing the qubit frequency at the flux insensitive spot, we find that the qubit exhibits increasingly weaker coupling to TLS defects, which is desirable for high-fidelity quantum operations. Our work establishes a generic noise model for the design of high coherence fluxonium and future generations of noise resilient superconducting qubits.