Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory Cells
Marta Bagatin, Simone Gerardin, A. Paccagnella, Silvia Beltrami
Abstract
Total ionizing dose effects in 3D NAND Flash memories with replacement gate technology are evaluated. Threshold voltage shifts and bit error rates in devices exposed to X rays are studied, focusing on the response of replacement gate cells. The structure of the memory array, the cell geometry and architecture, and the materials impacting on the radiation susceptibility are discussed together with the underlying mechanisms. The results are compared with 3D NAND Flash memory cells with floating gate technology in terms of threshold voltage shifts, dependence on program pattern, and error rate, showing differences, mainly resulting from voltage level optimization choices.
Topics & Concepts
NAND gateThreshold voltageFlash (photography)Ionizing radiationFlash memoryVoltageAbsorbed doseOptoelectronicsLogic gateMaterials scienceRadiationElectronic engineeringElectrical engineeringPhysicsComputer scienceComputer hardwareTransistorOpticsIrradiationEngineeringNuclear physicsRadiation Effects in ElectronicsAdvanced Memory and Neural ComputingSemiconductor materials and devices