Performance limit of monolayer MoSi<sub>2</sub>N<sub>4</sub> transistors
Xiaotian Sun, Zhigang Song, Nannan Huo, Shiqi Liu, Chen Yang, Jie Yang, Weizhou Wang, Jing Lü
Abstract
The ultra-short gate-length ML MoSi 2 N 4 MOSFET can meet the ITRS requirements with low power dissipation.
Topics & Concepts
Materials scienceMonolayerMOSFETTransistorLimit (mathematics)DissipationOptoelectronicsEngineering physicsNanotechnologyElectrical engineeringVoltageThermodynamicsEngineeringMathematical analysisPhysicsMathematics2D Materials and ApplicationsSemiconductor materials and devicesMXene and MAX Phase Materials