Reliability Challenges, Models, and Physics of Silicon Carbide and Gallium Nitride Power Devices
Tsuriel Avraham, Mamta Dhyani, J.B. Bernstein
Abstract
Silicon Carbide (SiC) and Gallium Nitride (GaN) are revolutionizing power electronics with greater efficiency and durability than Silicon. Nevertheless, their widespread use is limited by reliability challenges, including thermal degradation, defect propagation, and charge trapping, affecting their stability and lifetime. This review explores these reliability issues, comparing empirical and physics-based models for predicting device performance and identifying practical limitations. We also examine strategies to enhance robustness, from material design improvements to advanced testing methods. We propose a demonstrative GaN power circuit topology specifically for demonstrating reliability in real-world conditions. This work highlights key challenges and opportunities in developing more reliable SiC and GaN technologies for future applications.