Van der Waals Engineering of One-Transistor-One-Ferroelectric-Memristor Architecture for an Energy-Efficient Neuromorphic Array
Yinchang Ma, Maolin Chen, Fernando Aguirre, Yuan Yan, Sebastián Pazos, Chen Liu, Heng Wang, Tao Yang, Baoyu Wang, Cheng Gong, Kai Liu, Jefferson Zhe Liu, Mario Lanza, Fei Xue, Xixiang Zhang
Abstract
High Resolution Image Download MS PowerPoint Slide Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual memristor cells and effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) cells by assembling the emerging two-dimensional ferroelectric CuCrP 2 S 6 with MoS 2 and h -BN. The memory cell exhibits high resistance tunability (10 6 ), low sneak current (120 fA), and low static power (12 fW). A neuromorphic array with greatly reduced crosstalk is experimentally demonstrated. The nonvolatile resistance switching is driven by electric-field-induced ferroelectric polarization reversal. This van der Waals engineering approach offers a universal solution for creating compact and energy-efficient 2D in-memory computation systems for next-generation artificial neural networks.