Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory
Xiaomin Liu, Shuxia Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jinjin Zhao
Abstract
Abstract Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr 3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr 3 QDs:GO/ITO device is ≈ 1.4 × 10 7 , which is 1077 times larger than that in the dark condition (1.3 × 10 4 ). The SET/RESET voltages are + 2.28/ − 2.04 V and + 1.68/ − 1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load‐cycling. Before and after 10 4 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 10 7 and 2.3 × 10 7 , respectively. The ratio values are 8.8 × 10 4 and 2.9 × 10 4 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr 3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual‐controlled flexible RRAM devices.